Silicon Nanoelectronic Devices

Name: Silicon Nanoelectronic Devices
Brand: VDM Verlag Dr. Mueller E.K.
SKU: 9783639029604
Price: 258.35 PLN
Availability: InStock

Fabrication and Transport Properties

Autor: Stephen Robinson

Język:

Oprawa: Miękka

Wydawca: VDM Verlag Dr. Mueller E.K.

Dostępność: Dostępna u dostawcy

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258.35 zł

It is estimated that the scaling of conventional silicon MOSFETs will end around the year 2020. Whil...

Informacje o książce

Autor

Stephen Robinson

Język

Angielski

Oprawa

Książka - Miękka

Data wydania

2008

strony

128

EAN

9783639029604

ISBN

3639029607

Enbook ID

06812695

Wydawca

VDM Verlag Dr. Mueller E.K.

Waga

181

Wymiary

152 x 229 x 7

Pełny opis

It is estimated that the scaling of conventional silicon MOSFETs will end around the year 2020. While this certainly does not preclude the use of silicon in future devices, it does require new thoughts on the types of practical devices that can be used in integrated circuits. Namely, those that reduce power and work at least partly on the principles of quantum mechanics (such as spintronic or tunneling devices) will tend to be favored. The research presented herein is based on the fabrication and transport properties of nanometer-scale devices in silicon. The most promising of these structures are nanowires fabricated with a scanning tunneling microscope (STM). These high-density nanowires display the low-temperature phenomena of weak localization and one-dimensional conduction. Long-term applications of such nanowires and derivative devices include alternatives to conventional CMOS transistors and very sensitive charge and/or spin-detection devices. In addition, focused ion beams (FIBs) have been used to directly and precisely implant ions in the hope that they may be used to contact nanodevices, but surface damage may preclude that possibility.

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Silicon Nanoelectronic Devices

Fabrication and Transport Properties

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