Książka Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990 Qinghuang LinE. Todd RyanWen-li WuDo Yeung Yoon

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics: Volume 990

Symposium Held April 10-12, 2007, San Francisco, California, U.S.A.

Język: Angielski
Oprawa: Twarda
Dostępność: 50 % szansa
Przeszukamy cały świat
151.02
In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass prod...

Informacje o książce

Język
Angielski
Oprawa
Książka - Twarda
Data wydania
2007
strony
360
EAN
9781558999503
ISBN
1558999507
Enbook ID
02060444
Waga
65
Wymiary
152 x 229 x 21

Pełny opis

In 2004, the microelectronics industry quietly ushered in the Nanoelectronics Era with the mass production of sub-100nm node devices. The current leading-edge semiconductor chips in mass production - the so-called 90nm node devices - have a transistor gate length of less than 50nm. This rapid technological advancement in the semiconductor industry has been made possible by innovations in materials employed in both transistor fabrication (front-end-of-the-line, FEOL) and interconnect fabrication (back-end-of-the-line, BEOL). The 90nm node BEOL features copper (Cu) interconnects and dielectric materials with a low-dielectric constant (k) of about 3.0. However, for the next generations of 65nm node and beyond, evolutionary and revolutionary innovations in BEOL materials and processes are needed to fuel the continued, healthy growth of the semiconductor. This book provides a forum to exchange the latest advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addressed interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.

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