High Magnetic Fields in Semiconductor Physics II

Name: High Magnetic Fields in Semiconductor Physics II
Brand: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
SKU: 9783642838125
Price: 641.42 PLN
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Transport and Optics, Proceedings of the International Conference, Würzburg, Fed. Rep. of Germany, August 22 26, 1988

Autor: Gottfried Landwehr

Język:

Oprawa: Miękka

Wydawca: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Dostępność: Dostępna u dostawcy

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This volume contains contributions presented at the International Conference "The Application of Hig...

Informacje o książce

Autor

Gottfried Landwehr

Język

Angielski

Oprawa

Książka - Miękka

Data wydania

2011

strony

651

EAN

9783642838125

ISBN

364283812X

Enbook ID

06966024

Wydawca

Springer-Verlag Berlin and Heidelberg GmbH & Co. KG

Waga

1007

Wymiary

155 x 235 x 37

Pełny opis

This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.

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High Magnetic Fields in Semiconductor Physics II

Transport and Optics, Proceedings of the International Conference, Würzburg, Fed. Rep. of Germany, August 22 26, 1988

Informacje o książce

Pełny opis

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