High-k/Metal-gate Devices for Future CMOS Technology

Name: High-k/Metal-gate Devices for Future CMOS Technology
Brand: VDM Verlag
SKU: 9783836465298
Price: 297.31 PLN
Availability: InStock

Autor: Stephan Abermann

Język:

Oprawa: Miękka

Wydawca: VDM Verlag

Dostępność: Dostępna u dostawcy

Wysyłamy za 14-21 dni

297.31 zł

The present work addresses the investigation of§high-? dielectrics and their applicability in§CMOS-d...

Informacje o książce

Autor

Stephan Abermann

Język

Angielski

Oprawa

Książka - Miękka

Data wydania

2008

strony

180

EAN

9783836465298

ISBN

3836465299

Enbook ID

06854492

Wydawca

VDM Verlag

Waga

249

Wymiary

152 x 229 x 10

Pełny opis

The present work addresses the investigation of§high-? dielectrics and their applicability in§CMOS-devices, using metal-gate electrodes. The§contents firstly include the deposition of zirconium§dioxide and hafnium dioxide from the gas phase, using§organometallic precursors, and their physico-chemical§characterization. Furthermore, these material systems§are investigated regarding their thermodynamical§stability.§In the following, MOS-capacitors are fabricated by§the selective deposition of gate electrodes made from§aluminum, molybdenum, nickel, or titanium-nitride,§and characterized regarding their electrical behavior. §Results within this work demonstrate that well§balanced and correctly applied annealing of the§devices clearly improves electrical behavior. We§attribute these materials high potential to be§applied in near-future CMOS-technology.

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