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Książka Gallium Oxide Masataka Higashiwaki

Gallium Oxide

Materials Properties, Crystal Growth, and Devices

Autor: Masataka Higashiwaki, Shizuo Fujita
Język: Angielski
Oprawa: Twarda
Wydawca: Springer Nature Switzerland AG
Dostępność: Dostępna u dostawcy
Wysyłamy za 10-18 dni
374.67 zł
This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O...

Informacje o książce

Autor
Masataka Higashiwaki, Shizuo Fujita
Język
Angielski
Oprawa
Książka - Twarda
Data wydania
2020
strony
764
EAN
9783030371524
Enbook ID
25208523
Wydawca
Springer Nature Switzerland AG
Waga
1346
Wymiary
155 x 235 x 48

Pełny opis

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O ). Ga2O has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O .

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