Książka Ferroelectric Random Access Memories Hiroshi Ishiwara

Ferroelectric Random Access Memories

Fundamentals and Applications

Język: Angielski
Oprawa: Twarda
Dostępność: Dostępna u dostawcy w małych ilościach
Wysyłamy za 13-18 dni
1 404.79
In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which includ...

Informacje o książce

Język
Angielski
Oprawa
Książka - Twarda
Data wydania
2004
strony
291
EAN
9783540407188
ISBN
3540407189
Enbook ID
01562920
Waga
1350
Wymiary
155 x 235 x 24

Pełny opis

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.

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