Książka Engineering Surface Morphology Valerian Ignatescu

Engineering Surface Morphology

At the Atomic Level with Applications in Electronic Materials

Język: Angielski
Oprawa: Miękka
Dostępność: Na zamówienie
Wysyłamy za 17-27 dni
246.60
The silicon (111) and (001) surfaces have wide technological importance. Control of the morphologies...

Informacje o książce

Język
Angielski
Oprawa
Książka - Miękka
Data wydania
2008
strony
136
EAN
9783836474399
Enbook ID
06969850
Waga
219
Wymiary
150 x 8 x 8

Pełny opis

The silicon (111) and (001) surfaces have wide technological importance. Control of the morphologies of these surfaces at the atomic level is vital for such applications as layer-by-layer growth of epitaxial overlayers or assembly of nano-scale devices. By creating large areas with no or widely spaced atomic steps on patterned silicon surfaces by ultra-high vacuum (UHV) annealing, surface structures generated by surface premelting can be analyzed by simple quenching. The early roughness variation as a function of temperature and the morphologies that develop close to the boundaries of etched craters on Si(111) during UHV processing were also studied. Two applications using the substrates processed by UHV annealing were described. First, MOS capacitors were built on three types of Si(111) surfaces viz. atomically flat surfaces, stepped surfaces cleaned in UHV, and normal, RCA cleaned wafer surfaces. As expected, the smoother the Si substrate, the lower is the leakage current. In another application, Si(111) substrates with regular arrays of atomic steps were used to induce azimuthal alignment of crystals in thin polycrystalline pentacene films.

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